Characteristics of TiO2, Cu2O, and TiO2/Cu2O thin films for application in PV devices

Abstract

Several Cu2O and TiO2 thin films and four additional TiO2/Cu2O structures were fabricated by direct current (DC) magnetron sputtering. The process parameters were selected on the basis of earlier studies and numerical simulations. We examined the morphology of a cross-section of the PV structures, roughness and topography, and the transmission spectra of the thin films. Additionally, the properties of the samples were determined by X-ray diffraction. Next, the morphology cross-sectional and layer compositions of the solar cells was evaluated by scanning electron microscopy. Only one of the TiO2/Cu2O structures appeared smooth and homogeneous with columnar-type growth. For the as-grown films, diffraction peaks were observed and identified as brookite, rutile, CuO, and Cu2O and the average roughness of the samples was 0.5, 1.2, 5.4, and 4.0 nm, respectively. Finally, the transmission spectra of the thin films were recorded. Transmission and reflection spectra of ultraviolet-visible spectroscopy were analyzed, and the optical band gap and absorption coefficient of the oxidized layers were calculated. In the region of 400 to 1000 nm, transmittance varied from 5% to 70% in the TiO2 samples, and from 15% to 40% in the Cu2O samples, and reflectance of the TiO2 and Cu2O samples ranged from 20% to 90%. In the region of 1.5 eV to 3.5 eV, the mean absorption coefficient varied from ∼105 1/cm to ∼3 · 105 1/cm for TiO2 thin film, and from ∼2 · 105 to ∼6 · 105 1/cm for Cu2O thin film. The optical band gap values of the samples shifted slightly toward bulk anatase-3.5 eV, bulk rutile-3.1 eV, and copper(I) oxide. Finally, silver contacts were used for the electrodes. One of the fabricated TiO2/Cu2O PV structures was found to be sensitive to electromagnetic radiance during the experiment.